Current-driven destabilization of both collinear configurations in asymmetric spin-valves

Spin transfer torque in spin valves usually destabilizes one of the collinear configurations (either parallel or antiparallel) and stabilizes the second one. Apart from this, balance of the spin-transfer and damping torques can lead to steady precessional modes. In this letter we show that in some asymmetric nanopillars spin current can destabilize both parallel and antiparallel configurations. As a result, stationary precessional modes can occur at zero magnetic field. The corresponding phase diagram as well as frequencies of the precessional modes have been calculated in the framework of macrospin model. The relevant spin transfer torque has been calculated in terms of the macroscopic model based on spin diffusion equations.Comment: 4 pages, 4 figure

Spin effects in single-electron tunneling in magnetic junctions

Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation, spin fluctuations and tunnel magnetoresistance is analysed numerically in the case of a nonmagnetic island. It is shown that spin fluctuations are significant in magnetic as well as in nonmagnetic junctions.Comment: 14 pages, 3 eps-figures include

Nonlinear magnetotransport in dual spin valves

Recent experimental measurements of magnetoresistance in dual spin valves [A. Aziz et al., Phys. Rev. Lett. 103, 237203 (2009)] reveal some nonlinear features of transport, which have not been observed in other systems. We propose a phenomenological model describing current-dependent resistance (and giant magnetoresistance) in double spin valves. The model is based on a modified Valet-Fert approach, and takes into account the dependence of bulk/interface resistance and bulk/interface spin asymmetry parameters for the central magnetic layer on spin accumulation, and consequently on charge current. Such a nonlinear model accounts for recent experimental observations

Gate-controlled spin polarized current in ferromagnetic single electron transistors

We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees of freedom. When the magnetizations of ferromagnetic leads are in anti-parallel alignment, the spins accumulate in the island and a difference of chemical potentials of the two spins is built up. This shift in chemical potential acts as charge offset in the island and alternates the gate dependence of spin current. Taking advantage of this effect, one can control the polarization of current up to the polarization of lead by tuning gate voltages.Comment: 5 pages, 4 figure